* include internal I/O matching, and thermally-enhanced, ceramic open-cavity packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA071701E
* Package H-36248-2 PTFA071701F
* Package H-37248-2 Two-tone Dri
PTFA071701E Datasheet (278.36 KB)
PTFA071701E
278.36 KB
Thermally-enhanced high power rf ldmos fets.
PTFA071701E PTFA071701F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725
* 770 MHz
Descript.
📁 Related Datasheet
PTFA071701F Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFA070601E Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFA070601F Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFA072401EL Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFA072401FL Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFA041501E Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFA041501F Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFA041501GL Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFA041501HL Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFA043002E Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
