PXAC201202FC Datasheet - Infineon

PXAC201202FC, Thermally-Enhanced High Power RF LDMOS FET

PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 * 2200 MHz .
The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band.

datasheet Preview Page 1 from Datasheet4u.com

PXAC201202FC-Infineon.pdf

PXAC201202FC Datasheet Preview — Preview of PXAC201202FC PDF

Datasheet Details

Part number:

PXAC201202FC

Manufacturer:

Infineon ↗

File Size:

399.56 KB

Description:

Thermally-Enhanced High Power RF LDMOS FET

Features

* input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC201202FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-car

PXAC201202FC Distributors

📁 Related Datasheet

PXAC200902FC PXAC210552FC PXAC241002FC PXAC261002FC PXAC37 PXAC37KBA

📌 All Tags

PXAC201202FC Thermally-Enhanced High Power LDMOS FET Infineon

Infineon PXAC201202FC-like datasheet