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PXAC201202FC

Thermally-Enhanced High Power RF LDMOS FET

PXAC201202FC Features

* input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC201202FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-car

PXAC201202FC Datasheet (399.56 KB)

Preview of PXAC201202FC PDF

Datasheet Details

Part number:

PXAC201202FC

Manufacturer:

Infineon ↗

File Size:

399.56 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PXAC201202FC Thermally-Enhanced High Power LDMOS FET Infineon

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