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PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET

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Description

PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 * 2200 MHz .
The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band.

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Features

* input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC201202FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-car

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PXAC201202FC Thermally-Enhanced High Power LDMOS FET Infineon
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