PXAC201202FC Datasheet, Fet, Infineon

PXAC201202FC Features

• Fet input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance

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Part number:

PXAC201202FC

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Infineon ↗

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📄 Datasheet

Description:

Thermally-enhanced high power rf ldmos fet. The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequ

PXAC201202FC Application

• Applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for Doherty amplifier designs. It features in

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PXAC201202FC

Infineon

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