Datasheet Specifications
- Part number
- PXAC260602FC
- Manufacturer
- Infineon ↗
- File Size
- 440.33 KB
- Datasheet
- PXAC260602FC-Infineon.pdf
- Description
- Thermally-Enhanced High Power RF LDMOS FET
Description
PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 * 2690 MHz .Features
* include dual-path design, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85PXAC260602FC Distributors
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