PXAC260602FC Datasheet, Fet, Infineon

PXAC260602FC Features

• Fet include dual-path design, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal perf

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Part number:

PXAC260602FC

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Infineon ↗

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📄 Datasheet

Description:

Thermally-enhanced high power rf ldmos fet. The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier appl

PXAC260602FC Application

• Applications in the 2620 to 2690 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package with earless flange

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PXAC260602FC

Infineon

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