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PXAC260602FC Datasheet - Infineon

PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET

PXAC260602FC Features

* include dual-path design, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85

PXAC260602FC-Infineon.pdf

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Datasheet Details

Part number:

PXAC260602FC

Manufacturer:

Infineon ↗

File Size:

440.33 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PXAC260602FC PXAC260602FC Thermally-Enhanced High Power LDMOS FET Infineon

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