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PXAC260602FC - Thermally-Enhanced High Power RF LDMOS FET

PXAC260602FC Description

PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 * 2690 MHz .
The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2.

PXAC260602FC Features

* include dual-path design, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85

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Thermally-Enhanced High Power LDMOS FET Infineon
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