Part number:
PXAC260602FC
Manufacturer:
File Size:
440.33 KB
Description:
Thermally-enhanced high power rf ldmos fet.
PXAC260602FC Datasheet (440.33 KB)
* include dual-path design, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85
PXAC260602FC Datasheet (440.33 KB)
PXAC260602FC
440.33 KB
Thermally-enhanced high power rf ldmos fet.
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