Part number:
PXAC260602FC
Manufacturer:
File Size:
440.33 KB
Description:
Thermally-enhanced high power rf ldmos fet.
Datasheet Details
Datasheet Details
Part number:
PXAC260602FC
Manufacturer:
File Size:
440.33 KB
Description:
Thermally-enhanced high power rf ldmos fet.
PXAC260602FC, Thermally-Enhanced High Power RF LDMOS FET
PXAC260602FC Features
* include dual-path design, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85
📁 Related Datasheet
📌 All Tags