Datasheet4U Logo Datasheet4U.com

PXAC201602FC

Thermally-Enhanced High Power RF LDMOS FET

PXAC201602FC Features

* input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC201602FC Package H-37248-4 Gain (dB), Peak/Average Ratio Efficiency (%) Single-car

PXAC201602FC Datasheet (361.53 KB)

Preview of PXAC201602FC PDF

Datasheet Details

Part number:

PXAC201602FC

Manufacturer:

Infineon ↗

File Size:

361.53 KB

Description:

Thermally-enhanced high power rf ldmos fet.

📁 Related Datasheet

PXAC201202FC - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in.

PXAC200902FC - Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
PXAC200902FC Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 – 2170 MHz Description The PXAC200902FC is a 90-watt LDMOS FET with an asymm.

PXAC203302FV - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PXAC203302FV Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 – 2025 MHz Description The PXAC203302FV is a 330-watt LDMOS FET with an as.

PXAC203302FV - Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
PXAC203302FV Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 – 2025 MHz Description The PXAC203302FV is a 330-watt LDMOS FET with an as.

PXAC210552FC - Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
PXAC210552FC Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz Description The PXAC210552FC is a 55-watt LDMOS FET with an asym.

PXAC241002FC - Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
PXAC241002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 – 2400 MHz Description The PXAC241002FC is a 100-watt LDMOS FET with an asy.

PXAC241702FC - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PXAC241702FC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 – 2400 MHz Description The PXAC241702FC is a 28 V LDMOS FET with an asymm­.

PXAC243502FV - High Power RF LDMOS Field Effect Transistor (Infineon)
PXAC243502FV High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz Description The PXAC243502FV LDMOS FET is a 350-watt LDMOS FE.

TAGS

PXAC201602FC Thermally-Enhanced High Power LDMOS FET Infineon

Image Gallery

PXAC201602FC Datasheet Preview Page 2 PXAC201602FC Datasheet Preview Page 3

PXAC201602FC Distributor