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PXAC201602FC - Thermally-Enhanced High Power RF LDMOS FET

PXAC201602FC Description

PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 * 1920 MHz, 2010 * 2025 MHz .
The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz f.

PXAC201602FC Features

* input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC201602FC Package H-37248-4 Gain (dB), Peak/Average Ratio Efficiency (%) Single-car

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Thermally-Enhanced High Power LDMOS FET Infineon
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