PXAC201602FC - Thermally-Enhanced High Power RF LDMOS FET
PXAC201602FC Features
* input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC201602FC Package H-37248-4 Gain (dB), Peak/Average Ratio Efficiency (%) Single-car
