PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET

Infineon

Description

PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 * 1920 MHz, 2010 * 2025 MHz .
The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz f.

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Datasheet Specifications

Part number: PXAC201602FC
Manufacturer: Infineon ↗
File Size: 361.53 KB
Datasheet: PXAC201602FC-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET

Features

* input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC201602FC Package H-37248-4 Gain (dB), Peak/Average Ratio Efficiency (%) Single-car

PXAC201602FC Distributors

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PXAC201602FC Thermally-Enhanced High Power LDMOS FET Infineon

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