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PXAC241002FC Thermally-Enhanced High Power RF LDMOS FET

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Description

PXAC241002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 * 2400 MHz .
The PXAC241002FC is a 100-watt LDMOS FET with an asymmetric design, intended for use in multi-stantdard cellular power amplifier applications in the 23.

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Datasheet Specifications

Part number
PXAC241002FC
Manufacturer
Wolfspeed
File Size
263.17 KB
Datasheet
PXAC241002FC-Wolfspeed.pdf
Description
Thermally-Enhanced High Power RF LDMOS FET

Features

* include dual-path design, input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Single-carrier WCDMA Drive-up VDD = 28 V, IDQ(main)

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