PXAC241002FC - Thermally-Enhanced High Power RF LDMOS FET
PXAC241002FC Features
* include dual-path design, input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Single-carrier WCDMA Drive-up VDD = 28 V, IDQ(main)