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PXAC203302FV Datasheet - Infineon

PXAC203302FV Thermally-Enhanced High Power RF LDMOS FET

PXAC203302FV Features

* include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC203302FV Package H-37275-4 Peak/Average Ratio, Gain (dB) Ef

PXAC203302FV-Infineon.pdf

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Datasheet Details

Part number:

PXAC203302FV

Manufacturer:

Infineon ↗

File Size:

341.44 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PXAC203302FV PXAC203302FV Thermally-Enhanced High Power LDMOS FET Infineon

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