PXAC203302FV - Thermally-Enhanced High Power RF LDMOS FET
PXAC203302FV Features
* include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC203302FV Package H-37275-4 Peak/Average Ratio, Gain (dB) Ef
