PXAC203302FV Datasheet, Fet, Infineon

PXAC203302FV Features

• Fet include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excell

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PXAC203302FV

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Infineon ↗

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📄 Datasheet

Description:

Thermally-enhanced high power rf ldmos fet. The PXAC203302FV is a 330-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier appl

PXAC203302FV Application

• Applications in the 1880 to 2025 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package wit

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PXAC203302FV

Infineon

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