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PXAC203302FV Thermally-Enhanced High Power RF LDMOS FET

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Description

PXAC203302FV Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 * 2025 MHz .
The PXAC203302FV is a 330-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1.

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Features

* include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC203302FV Package H-37275-4 Peak/Average Ratio, Gain (dB) Ef

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PXAC203302FV Thermally-Enhanced High Power LDMOS FET Infineon
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