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PXAC243502FV Datasheet - Infineon

PXAC243502FV High Power RF LDMOS Field Effect Transistor

PXAC243502FV Features

* include an asymmetric design with high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC243502FV Package H-37275-4 Single-carrier WCDMA Broadband Performa

PXAC243502FV-Infineon.pdf

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Datasheet Details

Part number:

PXAC243502FV

Manufacturer:

Infineon ↗

File Size:

393.74 KB

Description:

High power rf ldmos field effect transistor.

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PXAC243502FV PXAC243502FV High Power LDMOS Field Effect Transistor Infineon

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