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PXAC243502FV - High Power RF LDMOS Field Effect Transistor

PXAC243502FV Description

PXAC243502FV High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 * 2400 MHz .
The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band.

PXAC243502FV Features

* include an asymmetric design with high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC243502FV Package H-37275-4 Single-carrier WCDMA Broadband Performa

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High Power LDMOS Field Effect Transistor Infineon
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