Part number:
PXAC243502FV
Manufacturer:
File Size:
393.74 KB
Description:
High power rf ldmos field effect transistor.
* include an asymmetric design with high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC243502FV Package H-37275-4 Single-carrier WCDMA Broadband Performa
PXAC243502FV Datasheet (393.74 KB)
PXAC243502FV
393.74 KB
High power rf ldmos field effect transistor.
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