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PXAC260622SC Datasheet - Infineon

PXAC260622SC Thermally-Enhanced High Power RF LDMOS FET

PXAC260622SC Features

* dual-path design, input and output matching, and a thermally-enhanced, surface-mount package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC260622SC Package H-37248H-4 with formed leads Peak

PXAC260622SC-Infineon.pdf

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Datasheet Details

Part number:

PXAC260622SC

Manufacturer:

Infineon ↗

File Size:

391.54 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PXAC260622SC PXAC260622SC Thermally-Enhanced High Power LDMOS FET Infineon

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