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PXAC260622SC Thermally-Enhanced High Power RF LDMOS FET

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Description

PXAC260622SC Thermally-Enhanced High Power RF LDMOS FET 75 W, 28 V, 2496 * 2690 MHz .
The PXAC260622SC is a 75-watt LDMOS FET with an asymetric design for use in multi-standard cellular power amplifier applications in the 2496 to 2690 M.

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Features

* dual-path design, input and output matching, and a thermally-enhanced, surface-mount package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC260622SC Package H-37248H-4 with formed leads Peak

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