Part number:
PXAC261212FC
Manufacturer:
File Size:
395.17 KB
Description:
Thermally-enhanced high power rf ldmos fet.
* dual-path design, input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC261212FC Package H-37248-4 Gain (dB) Drain Efficiency (%) Two-ca
PXAC261212FC Datasheet (395.17 KB)
PXAC261212FC
395.17 KB
Thermally-enhanced high power rf ldmos fet.
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