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PXAC261212FC Datasheet - Infineon

PXAC261212FC Thermally-Enhanced High Power RF LDMOS FET

PXAC261212FC Features

* dual-path design, input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC261212FC Package H-37248-4 Gain (dB) Drain Efficiency (%) Two-ca

PXAC261212FC-Infineon.pdf

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Datasheet Details

Part number:

PXAC261212FC

Manufacturer:

Infineon ↗

File Size:

395.17 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PXAC261212FC PXAC261212FC Thermally-Enhanced High Power LDMOS FET Infineon

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