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PXAC261212FC Thermally-Enhanced High Power RF LDMOS FET

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Description

PXAC261212FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 * 2690 MHz .
The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric designed for use in multi-standard cellular power amplifier applications in the 2496 to 26.

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Features

* dual-path design, input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC261212FC Package H-37248-4 Gain (dB) Drain Efficiency (%) Two-ca

PXAC261212FC Distributors

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PXAC261212FC Thermally-Enhanced High Power LDMOS FET Infineon
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