Part number:
PXAC261002FC
Manufacturer:
File Size:
158.01 KB
Description:
Thermally-enhanced high power rf ldmos fet.
PXAC261002FC Datasheet (158.01 KB)
* include dual-path design, high gain and a thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC261002FC Package H-37248-4 Gain (dB) Drain Efficiency (%) Two-carrier WCDM
PXAC261002FC Datasheet (158.01 KB)
PXAC261002FC
158.01 KB
Thermally-enhanced high power rf ldmos fet.
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