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PXAC261002FC Datasheet - Infineon

PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET

PXAC261002FC Features

* include dual-path design, high gain and a thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC261002FC Package H-37248-4 Gain (dB) Drain Efficiency (%) Two-carrier WCDM

PXAC261002FC-Infineon.pdf

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Datasheet Details

Part number:

PXAC261002FC

Manufacturer:

Infineon ↗

File Size:

158.01 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PXAC261002FC PXAC261002FC Thermally-Enhanced High Power LDMOS FET Infineon

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