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PXAC261002FC - Thermally-Enhanced High Power RF LDMOS FET

PXAC261002FC Description

PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 * 2690 MHz .
The PXAC261002FC is a 100-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applications in the 249.

PXAC261002FC Features

* include dual-path design, high gain and a thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC261002FC Package H-37248-4 Gain (dB) Drain Efficiency (%) Two-carrier WCDM

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Thermally-Enhanced High Power LDMOS FET Infineon
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