PXAC261002FC Datasheet, Fet, Infineon

PXAC261002FC Features

• Fet include dual-path design, high gain and a thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal perf

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PXAC261002FC

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Infineon ↗

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📄 Datasheet

Description:

Thermally-enhanced high power rf ldmos fet. The PXAC261002FC is a 100-watt LDMOS FET with an asymmetric design intended for use in multi-standard cellular power amplifier applic

PXAC261002FC Application

• Applications in the 2496 to 2690 MHz frequency band. Features include dual-path design, high gain and a thermally-enhanced package with earless flang

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PXAC261002FC

Infineon

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