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PXAC261002FC Datasheet - Wolfspeed

PXAC261002FC Thermally-Enhanced High Power RF LDMOS FET

PXAC261002FC Features

* include dual-path design, high gain and a thermally-enhanced package with earless flanges. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Two-carrier WCDMA Drive-up VDD = 26 V, IDQ = 210 mA, VGS1 = 2.62 V, ƒ = 2590

PXAC261002FC-Wolfspeed.pdf

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Datasheet Details

Part number:

PXAC261002FC

Manufacturer:

Wolfspeed

File Size:

489.02 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PXAC261002FC PXAC261002FC Thermally-Enhanced High Power LDMOS FET Wolfspeed

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