PXAC241702FC - Thermally-Enhanced High Power RF LDMOS FET
PXAC241702FC Features
* include dual-path design, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC241702FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Sin
