PXAC241702FC

Thermally-Enhanced High Power RF LDMOS FET

Infineon

PXAC241702FC Features

* include dual-path design, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC241702FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Sin

PXAC241702FC Datasheet (350.70 KB)

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PXAC241702FC

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Infineon ↗

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Description:

Thermally-enhanced high power rf ldmos fet.

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PXAC241702FC Thermally-Enhanced High Power LDMOS FET Infineon

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PXAC241702FC Features

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