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PXAC241702FC - Thermally-Enhanced High Power RF LDMOS FET

PXAC241702FC Description

PXAC241702FC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 * 2400 MHz .
The PXAC241702FC is a 28 V LDMOS FET with an asymm­­ etrical design intended for use in multi-standard cellular power amplifier applications in the 23.

PXAC241702FC Features

* include dual-path design, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC241702FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Sin

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Thermally-Enhanced High Power LDMOS FET Infineon
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