PTVA120501EA - Thermally-Enhanced High Power RF LDMOS FET
PTVA120501EA Features
* include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA120501EA Package H-36265-2 POUT (dBm) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50
