PTVA120501EA - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Infineon

Part number	PTVA120501EA
Manufacturer	Infineon
File Size	517.79 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTVA120501EA Datasheet
Additional preview pages of the PTVA120501EA datasheet.

The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band.

include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA120501EA Package H-36265-2 POUT (dBm) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, TCASE = 25°C, 300 µs pulse width, 10% duty cycle 60 55 50 45 40 35 30 18 70 Efficiency 60 Output Power 50 40 1200 MHz 30 1300 MHz 20 1400 MHz 10 a120501ea_g1-1 22 26 30 34 3.

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Published: Nov 27, 2016 |