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PTVA120501EA Datasheet - Infineon

PTVA120501EA Thermally-Enhanced High Power RF LDMOS FET

PTVA120501EA Features

* include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA120501EA Package H-36265-2 POUT (dBm) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50

PTVA120501EA-Infineon.pdf

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Datasheet Details

Part number:

PTVA120501EA

Manufacturer:

Infineon ↗

File Size:

517.79 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PTVA120501EA PTVA120501EA Thermally-Enhanced High Power LDMOS FET Infineon

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