PTVA120501EA

Thermally-Enhanced High Power RF LDMOS FET

Infineon

PTVA120501EA Features

* include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA120501EA Package H-36265-2 POUT (dBm) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50

PTVA120501EA Datasheet (517.79 KB)

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PTVA120501EA

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Infineon ↗

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517.79 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PTVA120501EA Thermally-Enhanced High Power LDMOS FET Infineon

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PTVA120501EA Features

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