Datasheet Specifications
- Part number
- PTVA127002EV
- Manufacturer
- Infineon ↗
- File Size
- 518.11 KB
- Datasheet
- PTVA127002EV-Infineon.pdf
- Description
- Thermally-Enhanced High Power RF LDMOS FET
Description
PTVA127002EV Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 * 1400 MHz .
Features
* include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA127002EV Package H-36275-4 POUT (dBm) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50PTVA127002EV Distributors
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