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PTVA127002EV - Thermally-Enhanced High Power RF LDMOS FET

PTVA127002EV Description

PTVA127002EV Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 * 1400 MHz .
The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band.

PTVA127002EV Features

* include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA127002EV Package H-36275-4 POUT (dBm) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50

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Thermally-Enhanced High Power LDMOS FET Infineon
Infineon PTVA127002EV-like datasheet