PTVA127002EV Datasheet, FET, Infineon

PTVA127002EV Features

• Fet include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and super

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PTVA127002EV

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Infineon ↗

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📄 Datasheet

Description:

Thermally-enhanced high power rf ldmos fet. The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features inclu

PTVA127002EV Application

• Applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured w

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PTVA127002EV

Infineon

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