PTVA127002EV

Thermally-Enhanced High Power RF LDMOS FET

Infineon

PTVA127002EV Features

* include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA127002EV Package H-36275-4 POUT (dBm) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50

PTVA127002EV Datasheet (518.11 KB)

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PTVA127002EV

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Infineon ↗

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518.11 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PTVA127002EV Thermally-Enhanced High Power LDMOS FET Infineon

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PTVA127002EV Features

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