PTVA127002EV Datasheet - Infineon

PTVA127002EV, Thermally-Enhanced High Power RF LDMOS FET

PTVA127002EV Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 * 1400 MHz .
The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band.

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Datasheet Details

Part number:

PTVA127002EV

Manufacturer:

Infineon ↗

File Size:

518.11 KB

Description:

Thermally-Enhanced High Power RF LDMOS FET

Features

* include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA127002EV Package H-36275-4 POUT (dBm) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50

PTVA127002EV Distributors

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PTVA127002EV Thermally-Enhanced High Power LDMOS FET Infineon

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