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PTVA030121EA

Thermally-Enhanced High Power RF LDMOS FET

PTVA030121EA Features

* include high gain and a thermally-enhanced package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA030121EA Package H-36265-2 Gain (dB) Drain Efficiency (%) CW Power Sweep VDD = 50 V, IDQ = 30 mA, ƒ = 450 MHz

PTVA030121EA Datasheet (313.61 KB)

Preview of PTVA030121EA PDF

Datasheet Details

Part number:

PTVA030121EA

Manufacturer:

Infineon ↗

File Size:

313.61 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PTVA030121EA Thermally-Enhanced High Power LDMOS FET Infineon

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