PTVA042502FC, PTVA042502EC Thermally-Enhanced High Power RF LDMOS FET

Infineon

Description

PTVA042502EC PTVA042502FC Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 * 806 MHz .
The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band.

📥 Download Datasheet

PTVA042502FC Datasheet Preview — This datasheet PDF includes multiple part numbers: PTVA042502FC, PTVA042502EC. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: PTVA042502FC, PTVA042502EC
Manufacturer: Infineon ↗
File Size: 357.34 KB
Datasheet: PTVA042502EC-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET
Note: This datasheet PDF includes multiple part numbers: PTVA042502FC, PTVA042502EC.
Please refer to the document for exact specifications by model.

Features

* include high gain and thermally-enhanced package with bolt-down or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. Efficiency (%), Gain (dB) IMD Shoulder (dBc) DVB-T Performance Efficiancy, Gain and

PTVA042502FC Distributors

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Thermally-Enhanced High Power LDMOS FET Infineon

Infineon PTVA042502FC-like datasheet