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PTVA042502FC, PTVA042502EC - Thermally-Enhanced High Power RF LDMOS FET

PTVA042502FC Description

PTVA042502EC PTVA042502FC Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 * 806 MHz .
The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band.

PTVA042502FC Features

* include high gain and thermally-enhanced package with bolt-down or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. Efficiency (%), Gain (dB) IMD Shoulder (dBc) DVB-T Performance Efficiancy, Gain and

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: PTVA042502FC, PTVA042502EC. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
PTVA042502FC, PTVA042502EC
Manufacturer
Infineon ↗
File Size
357.34 KB
Datasheet
PTVA042502EC-Infineon.pdf
Description
Thermally-Enhanced High Power RF LDMOS FET
Note
This datasheet PDF includes multiple part numbers: PTVA042502FC, PTVA042502EC.
Please refer to the document for exact specifications by model.

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Thermally-Enhanced High Power LDMOS FET Infineon
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