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PTVA035002EV

Thermally-Enhanced High Power RF LDMOS FET

PTVA035002EV Features

* include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA035002EV Package H-36275-4 Gain (dB) Drain Efficiency (%) Pulsed CW Performance 450 MHz, VD

PTVA035002EV Datasheet (366.93 KB)

Preview of PTVA035002EV PDF

Datasheet Details

Part number:

PTVA035002EV

Manufacturer:

Infineon ↗

File Size:

366.93 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PTVA035002EV Thermally-Enhanced High Power LDMOS FET Infineon

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