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PTVA035002EV - Thermally-Enhanced High Power RF LDMOS FET

PTVA035002EV Description

PTVA035002EV Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 * 450 MHz .
The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band.

PTVA035002EV Features

* include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA035002EV Package H-36275-4 Gain (dB) Drain Efficiency (%) Pulsed CW Performance 450 MHz, VD

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Thermally-Enhanced High Power LDMOS FET Infineon
Infineon PTVA035002EV-like datasheet