Datasheet Specifications
- Part number
- PTVA035002EV
- Manufacturer
- Infineon ↗
- File Size
- 366.93 KB
- Datasheet
- PTVA035002EV-Infineon.pdf
- Description
- Thermally-Enhanced High Power RF LDMOS FET
Description
PTVA035002EV Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 * 450 MHz .
Features
* include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA035002EV Package H-36275-4 Gain (dB) Drain Efficiency (%) Pulsed CW Performance 450 MHz, VDPTVA035002EV Distributors
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