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PTVA047002EV - Thermally-Enhanced High Power RF LDMOS FET

PTVA047002EV Description

PTVA047002EV Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 470 * 806 MHz .
The PTVA047002EV LDMOS FET is designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band.

PTVA047002EV Features

* include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA047002EV Package H-36275-4 Drain Efficiency (%), Gain (dB) DVB-T Performance Drain Efficien

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Thermally-Enhanced High Power LDMOS FET Infineon
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