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PTVA047002EV

Thermally-Enhanced High Power RF LDMOS FET

PTVA047002EV Features

* include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA047002EV Package H-36275-4 Drain Efficiency (%), Gain (dB) DVB-T Performance Drain Efficien

PTVA047002EV Datasheet (345.07 KB)

Preview of PTVA047002EV PDF

Datasheet Details

Part number:

PTVA047002EV

Manufacturer:

Infineon ↗

File Size:

345.07 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PTVA047002EV Thermally-Enhanced High Power LDMOS FET Infineon

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