Datasheet Specifications
- Part number
- PTVA047002EV
- Manufacturer
- Infineon ↗
- File Size
- 345.07 KB
- Datasheet
- PTVA047002EV-Infineon.pdf
- Description
- Thermally-Enhanced High Power RF LDMOS FET
Description
PTVA047002EV Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 470 * 806 MHz .
Features
* include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA047002EV Package H-36275-4 Drain Efficiency (%), Gain (dB) DVB-T Performance Drain EfficienPTVA047002EV Distributors
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