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PTVA101K02EV Datasheet - Infineon

PTVA101K02EV Thermally-Enhanced High Power RF LDMOS FET

PTVA101K02EV Features

* include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA101K02EV Package H-36275-4 Gain (dB) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V

PTVA101K02EV-Infineon.pdf

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Datasheet Details

Part number:

PTVA101K02EV

Manufacturer:

Infineon ↗

File Size:

423.74 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PTVA101K02EV PTVA101K02EV Thermally-Enhanced High Power LDMOS FET Infineon

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