Datasheet Specifications
- Part number
- PTVA101K02EV
- Manufacturer
- Infineon ↗
- File Size
- 423.74 KB
- Datasheet
- PTVA101K02EV-Infineon.pdf
- Description
- Thermally-Enhanced High Power RF LDMOS FET
Description
PTVA101K02EV Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz .
Features
* include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA101K02EV Package H-36275-4 Gain (dB) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50 VPTVA101K02EV Distributors
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