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PTVA101K02EV - Thermally-Enhanced High Power RF LDMOS FET

PTVA101K02EV Description

PTVA101K02EV Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz .
The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band.

PTVA101K02EV Features

* include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA101K02EV Package H-36275-4 Gain (dB) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V

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Thermally-Enhanced High Power LDMOS FET Infineon
Infineon PTVA101K02EV-like datasheet