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PTVA104501EH Thermally-Enhanced High Power RF LDMOS FET

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Description

PTVA104501EH Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 * 1215 MHz .
The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band.

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Features

* include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA104501EH Package H-33288-2 POUT (dBm) Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V, IDQ

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