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PTVA104501EH Datasheet - Infineon

PTVA104501EH Thermally-Enhanced High Power RF LDMOS FET

PTVA104501EH Features

* include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA104501EH Package H-33288-2 POUT (dBm) Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V, IDQ

PTVA104501EH-Infineon.pdf

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Datasheet Details

Part number:

PTVA104501EH

Manufacturer:

Infineon ↗

File Size:

305.04 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PTVA104501EH PTVA104501EH Thermally-Enhanced High Power LDMOS FET Infineon

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