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PTVA120251EA 25W High Power RF LDMOS FET

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Description

PTVA120251EA Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 * 1400 MHz .
The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band.

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Datasheet Specifications

Part number
PTVA120251EA
Manufacturer
MACOM
File Size
836.28 KB
Datasheet
PTVA120251EA-MACOM.pdf
Description
25W High Power RF LDMOS FET

Features

* include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA, TCASE = 25°C 300 µs pulse width, 12% duty cycle 60 70

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