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PTVA120501EA 50W High Power RF LDMOS FET

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Description

PTVA120501EA Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 * 1400 MHz .
The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band.

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Datasheet Specifications

Part number
PTVA120501EA
Manufacturer
MACOM
File Size
652.53 KB
Datasheet
PTVA120501EA-MACOM.pdf
Description
50W High Power RF LDMOS FET

Features

* include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA120501EA Package H-36265-2 POUT (dBm) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V, IDQ =

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