PTVA123501FC, PTVA123501EC Thermally-Enhanced High Power RF LDMOS FETs

Infineon

Description

PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 * 1400 MHz .
The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band.

📥 Download Datasheet

PTVA123501FC Datasheet Preview — This datasheet PDF includes multiple part numbers: PTVA123501FC, PTVA123501EC. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: PTVA123501FC, PTVA123501EC
Manufacturer: Infineon ↗
File Size: 611.19 KB
Datasheet: PTVA123501EC-Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FETs
Note: This datasheet PDF includes multiple part numbers: PTVA123501FC, PTVA123501EC.
Please refer to the document for exact specifications by model.

Features

* include high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTVA123501EC Package H-36248-2 PTVA123501FC Package H-37248-2 Power Sweep, Pulsed RF

PTVA123501FC Distributors

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PTVA123501EC Thermally-Enhanced High Power LDMOS FETs Infineon

Infineon PTVA123501FC-like datasheet