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PTVA093002TC

Thermally-Enhanced High Power RF LDMOS FET

PTVA093002TC Features

* dual-path design, input matching, and a thermally-enhanced surface-mount package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA093002TC Package H-49248H-4, formed leads Peak/Average Ratio, Gain (dB) Efficiency

PTVA093002TC Datasheet (203.67 KB)

Preview of PTVA093002TC PDF

Datasheet Details

Part number:

PTVA093002TC

Manufacturer:

Infineon ↗

File Size:

203.67 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PTVA093002TC Thermally-Enhanced High Power LDMOS FET Infineon

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