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PTVA042502EC Thermally-Enhanced High Power RF LDMOS FET

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Description

PTVA042502EC PTVA042502FC Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 * 806 MHz .
The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band.

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Features

* include high gain and thermally-enhanced package with bolt-down or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. Efficiency (%), Gain (dB) IMD Shoulder (dBc) DVB-T Performance Efficiancy, Gain and

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Thermally-Enhanced High Power LDMOS FET Infineon
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