Datasheet Details
- Part number
- PTVA042502EC
- Manufacturer
- Infineon ↗
- File Size
- 357.34 KB
- Datasheet
- PTVA042502EC-Infineon.pdf
- Description
- Thermally-Enhanced High Power RF LDMOS FET
PTVA042502EC Description
PTVA042502EC PTVA042502FC Thermally-Enhanced High Power RF LDMOS FET 250 W, 50 V, 470 * 806 MHz .
The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band.
PTVA042502EC Features
* include high gain and thermally-enhanced package with bolt-down or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. Efficiency (%), Gain (dB) IMD Shoulder (dBc)
DVB-T Performance Efficiancy, Gain and
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