PTVA042502EC

Thermally-Enhanced High Power RF LDMOS FET

Infineon

PTVA042502EC Features

* include high gain and thermally-enhanced package with bolt-down or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. Efficiency (%), Gain (dB) IMD Shoulder (dBc) DVB-T Performance Efficiancy, Gain and

PTVA042502EC Datasheet (357.34 KB)

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PTVA042502EC

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Infineon ↗

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357.34 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PTVA042502EC Thermally-Enhanced High Power LDMOS FET Infineon

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PTVA042502EC Features

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