PTVA120251EA - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Infineon

Part number	PTVA120251EA
Manufacturer	Infineon
File Size	635.41 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTVA120251EA Datasheet
Additional preview pages of the PTVA120251EA datasheet.

The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band.

include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA120251EA Package H-36265-2 Output Power (dBm) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA, TCASE = 25°C 300 µs pulse width, 12% duty cycle 60 Efficiency 55 70 60 50 45 40 35 30 18 Output Power 50 40 1200 MHz 1300 MHz 30 1400 MHz 1200 MHz 1300 Mhz 20 140.

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Published: Feb 19, 2016 |