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PTVA120251EA Thermally-Enhanced High Power RF LDMOS FET

PTVA120251EA Description

PTVA120251EA Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 * 1400 MHz .
The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band.

PTVA120251EA Features

* include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA120251EA Package H-36265-2 Output Power (dBm) Drain Efficiency (%) Power Sweep, Pulsed RF

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Thermally-Enhanced High Power LDMOS FET Infineon
Infineon PTVA120251EA-like datasheet