PTVA120251EA - Thermally-Enhanced High Power RF LDMOS FET
PTVA120251EA Features
* include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA120251EA Package H-36265-2 Output Power (dBm) Drain Efficiency (%) Power Sweep, Pulsed RF
