C2312 Datasheet | Specifications & PDF Download

G H FEATURES • • • • HG RF POWER TRANSISTOR Semiconductors ROHS Compliance,Silicon NPN POWER TRANSISTOR 2SC2312 –T– SEATING PLANE 4 DESCRIPTION D

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G H FEATURES • • • • HG RF POWER TRANSISTOR Semiconductors ROHS Compliance,Silicon NPN POWER TRANSISTOR 2SC2312 –T– SEATING PLANE 4 DESCRIPTION D

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LTC2312-12 12-Bit, 500ksps Serial Sampling ADC in TSOT FEATURES n 500ksps Throughput Rate n No Cycle Latency n Guaranteed 12-Bit No Missing Codes n S

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ELEFLOW TECHNOLOGIES www.eleflow.com 2SC2312 www.DataSheet4U.net 1 ELEFLOW TECHNOLOGIES www.eleflow.com 2SC2312 2

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NPN Silicon AF Transistor BC 846 W BC 850 W Features q q q q q For AF input stages and driver applications High current gain Low collector-emit

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N-Channel 20V MOSFET LTC2312 Features: Surface-mounted package High Density Cell Design Halogen free Application Ultra Low On-Resistance BVDSS= 20

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LTC2312-14 14-Bit, 500ksps Serial Sampling ADC in TSOT FEATURES n 500ksps Throughput Rate n No Cycle Latency n Guaranteed 14-Bit No Missing Codes n S

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WTC2312 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 4.9 AMPERES DRAIN SOUCE VOLTAGE 20 VOLTAGE Features:

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