C3265 Datasheet | Specifications & PDF Download

2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3265 Low Frequency Power Amplifier Applications Power Switching Applications

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MCC Micro Commercial Components TM
     omponents 20736 Marilla Street Chatsworth  # $ % #

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KSC3265 KSC3265 Low Frequency Amplifier • Complement to KSA1298 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absol

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MCC Micro Commercial Components TM
     omponents 20736 Marilla Street Chatsworth  # $ % #

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SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES High DC Current Gain : hFE=100 320. Low

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SMD Type Silicon NPN Epitaxial 2SC3265 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features High DC current gain: hFE (1

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LTC3265 FEATURES Low Noise Dual Supply with Boost and Inverting Charge Pumps DESCRIPTION nn Boost Charge Pump Generates 2 • VIN_P (VIN_P Range: 4.5

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CYStech Electronics Corp. Spec. No. : C595N6 Issued Date : 2012.02.23 Revised Date : Page No. : 1/12 Current Mode PWM Controller MC3265N6 Descripti

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors KTC3265 TRANSISTOR (NPN) SOT-23 FEATURES z High DC curren

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KTC3265 NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Emitter Voltage Collector-Base Volt

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SMD Type NPN Transistors KTC3265 Transistors ■ Features ● High DC Current Gain ● Low Saturation Voltage ● Small Package ● Complementary to KTA1298

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KSC3265 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package.  / Features 。 Low frequency

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Production specification NPN Silicon Epitaxial Planar Transistor FEATURES  High DC current gain: hFE:100-320.  Low saturation voltage. Pb Lead-fr

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Semiconductor STC3265 NPN Silicon Transistor Description • Audio power amplifier application Features • High hFE : hFE=100~320 • Complementary pair

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Elektronische Bauelemente KTC3265 0.8A , 35V NPN Plastic Encapsulated Transistor FEATURE High DC current gain Complementary to KTA1298 CLASSIFICATI

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BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor FEATURES z z z z z High DC current gain: hFE:100-320 Low saturation voltage. Suitable for

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