TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT.
Leiditech
ULC332510P10 - ULTRA LOW CAPACITANCE TVS DIODE ARRAY
Features ● Ultra low capacitance: 0.4pF typical (I/O to I/O) ● Ultra low leakage: nA level ● Low operating voltage: 3.3V ● Low clamping voltage with s.
Toshiba Semiconductor
2SC3325 - Silicon NPN Transistor
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3325 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applicatio.
Motorola
MC33253 - Full Bridge Pre-Driver
Freescale Semiconductor, Inc. Order Number: MC33253/D Rev 3, 03/2001 Advance Information MC33253 55 VOLTS SEMICONDUCTOR TECHNICAL DATA Full Bridge.
Alliance Semiconductor Corporation
AS7C33256FT18B - 3.3V 256K x 18 Flow Through Synchronous SRAM
December 2004 ® AS7C33256FT18B 3.3V 256K × 18 Flow Through Synchronous SRAM Features • • • • • • • Organization: 262,144 words × 18 bits Fast clock .
Alliance Semiconductor Corporation
AS7C33256FT36A - (AS7C33256FT32A / AS7C33256FT36A) 3.3V 256K x 32/36 Flow-through synchronous SRAM
November 2004 ® AS7C33256FT32A AS7C33256FT36A 3.3V 256K × 32/36 Flow-through synchronous SRAM Features • • • • • • • Organization: 262,144 words × 3.
Alliance Semiconductor Corporation
AS7C33256NTD36A - (AS7C33256NTD32A / AS7C33256NTD36A) 3.3V 256K x 2/36 Pipelined burst Synchronous SRAM
November 2004 ® AS7C33256NTD32A AS7C33256NTD36A 3.3V 256K×32/36 Pipelined burst Synchronous SRAM with NTDTM Features • Organization: 262,144 words ×.
Alliance Semiconductor Corporation
AS7C33256NTF32A - (AS7C33256NTF32A / AS7C33256NTF36A) 3.3V 256K x 2/36 Flowthrough Synchronous SRAM
November 2004 ® AS7C33256NTF32A AS7C33256NTF36A 3.3V 256K×32/36 Flowthrough Synchronous SRAM with NTDTM Features • Organization: 262,144 words × 32 .
Alliance Semiconductor Corporation
AS7C33256PFD18B - 3.3V 256K x 18 pipeline burst synchronous SRAM
February 2005 ® AS7C33256PFD18B 3.3V 256K × 18 pipeline burst synchronous SRAM Features • • • • • • • • Organization: 262,144 words × 18 bits Fast c.
Alliance Semiconductor Corporation
AS7C33256PFD36A - (AS7C33256PFD32A / AS7C33256PFD36A) 3.3V 256K x 32/36 pipelined burst synchronous SRAM
December 2004 ® AS7C33256PFD32A AS7C33256PFD36A 3.3V 256K × 32/36 pipelined burst synchronous SRAM Features • • • • • • • • Organization: 262,144 wo.
Alliance Semiconductor Corporation
AS7C33256PFS18B - 3.3V 256K X 18 pipeline burst synchronous SRAM
December 2004 ® AS7C33256PFS18B 3.3V 256K × 18 pipeline burst synchronous SRAM Features • • • • • • • • Organization: 262,144 words × 18 bits Fast c.
Alliance Semiconductor Corporation
AS7C33256PFS32A - (AS7C33256PFS32A / AS7C33256PFS36A) 3.3V 256K x 32/36 pipelined burst synchronous SRAM
November 2004 ® AS7C33256PFS32A AS7C33256PFS36A 3.3V 256K × 32/36 pipelined burst synchronous SRAM Features • Organization: 262,144 words x 32 or 36.
Alliance Semiconductor Corporation
AS7C33256PFS36A - (AS7C33256PFS32A / AS7C33256PFS36A) 3.3V 256K x 32/36 pipelined burst synchronous SRAM
November 2004 ® AS7C33256PFS32A AS7C33256PFS36A 3.3V 256K × 32/36 pipelined burst synchronous SRAM Features • Organization: 262,144 words x 32 or 36.
Kexin
2SC3325 - Silicon NPN Transistor
SMD Type Silicon NPN Epitaxial 2SC3325 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Excellent hFE linearity : hF.
Alliance Semiconductor
AS7C33256NTD16A - 3.3V 256K X 16/18 SRAM
December 2002 AS7C33256NTD16A AS7C33256NTD18A ® 9 .î 65$0 ZLWK 17'TM Features • Organization: 262,144 words × 16 or 18 bits • NTD™1 arch.
Toshiba
C3325 - 2SC3325
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3325 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applicatio.
Motorola Inc
PC33253DW - Full Bridge Pre-Driver
Freescale Semiconductor, Inc. Order Number: MC33253/D Rev 3, 03/2001 Advance Information MC33253 55 VOLTS SEMICONDUCTOR TECHNICAL DATA Full Bridge.
Alliance Semiconductor Corporation
AS7C33256FT32A - (AS7C33256FT32A / AS7C33256FT36A) 3.3V 256K x 32/36 Flow-through synchronous SRAM
November 2004 ® AS7C33256FT32A AS7C33256FT36A 3.3V 256K × 32/36 Flow-through synchronous SRAM Features • • • • • • • Organization: 262,144 words × 3.
Alliance Semiconductor Corporation
AS7C33256NTD18B - 3.3V 256K x 8 Pipelined SRAM
February 2005 ® AS7C33256NTD18B 3.3V 256K×18 Pipelined SRAM with NTDTM Features • Organization: 262,144 words × 18 bits • NTD™ architecture for effi.
Alliance Semiconductor Corporation
AS7C33256NTD32A - (AS7C33256NTD32A / AS7C33256NTD36A) 3.3V 256K x 2/36 Pipelined burst Synchronous SRAM
November 2004 ® AS7C33256NTD32A AS7C33256NTD36A 3.3V 256K×32/36 Pipelined burst Synchronous SRAM with NTDTM Features • Organization: 262,144 words ×.
