2SC3325 Datasheet - Toshiba Semiconductor

2SC3325 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3325 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications 2SC3325 Unit: mm Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) High voltage: VCEO = 50 V (min) Complementary to 2SA1313 Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter volta.

2SC3325_ToshibaSemiconductor.pdf