C3852 Datasheet | Specifications & PDF Download

2SC3852/3852A High hFE LOW VCE (sat) Silicon NPN Epitaxial Planar Transistor sAbsolute maximum ratings (Ta=25°C) Ratings Symbol 2SC3852 2SC3852A

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2SC3852/3852A High hFE LOW VCE (sat) Silicon NPN Epitaxial Planar Transistor sAbsolute maximum ratings (Ta=25°C) Ratings Symbol 2SC3852 2SC3852A

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FEATURES n Charge Pump Input Range: 2.7V to 5.5V n Controller Input Range: 4V to 38V n Integrated Charge Pump Provides 5V Gate Drive to Logic Level MO

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3852 DESCRIPTION ·With TO-220Fa package ·Low col

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High Power-Factor Preregulator UC1852 UC2852 UC3852 FEATURES • Low-Cost Power Factor Correction • Power Factor Greater Than 0.99 • Few External Part

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2SC3852/3852A High hFE LOW VCE (sat) Silicon NPN Epitaxial Planar Transistor sAbsolute maximum ratings (Ta=25°C) Ratings Symbol 2SC3852 2SC3852A

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR POWER TRANSISTOR CFC3852 TO-220FP Full

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2SC3852/3852A High hFE LOW VCE (sat) Silicon NPN Epitaxial Planar Transistor sAbsolute maximum ratings (Ta=25°C) Ratings Symbol 2SC3852 2SC3852A

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2SC3852 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package.  / Features ,。 High hFE,

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A ·

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= 0.5A ·

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