C3902 Datasheet | Specifications & PDF Download

Free Datasheet http://www.datasheet-pdf.com/ Free Datasheet http://www.datasheet-pdf.com/ Free Datasheet http://www.datasheet-pdf.com/ Free Datashe

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Ordering number : EN2101E 2SA1507/2SC3902 Bipolar Transistor (–)160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single TO-126ML http://onsemi.com Application

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3902 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Large

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Ordering number:EN2101B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1507/2SC3902 160V/1.5A Switching Applications Applications · Color TV audio

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GSMDC3902X 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3902 DESCRIPTION ·With TO-126 package ·Complemen

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2SC3902 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package.  / Features ，， 2SA1507 。

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INTEGRATED CIRCUITS DIVISION BVDSX/ BVDGX 250V RDS(on) (max) 2.5 IDSS (min) 400mA Package SOT-223 Features • High Breakdown Voltage: 250V • On-R

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30V N-Channel MOSFETs PDC3902X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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INTEGRATED CIRCUITS DIVISION BVDSX/ BVDGX 250V RDS(on) (max) 2.5 IDSS (min) 400mA Package SOT-223 Features • High Breakdown Voltage: 250V • On-R

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INTEGRATED CIRCUITS DIVISION BVDSX/ BVDGX 250V RDS(on) (max) 2.5 IDSS (min) 400mA Package SOT-223 Features • High Breakdown Voltage: 250V • On-R

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UC2902 UC3902 SLUS232E − DECEMBER 19, 2002 − REVISED JULY 2011 LOAD SHARE CONTROLLER FEATURES D 2.7-V to 20-V Operation D 8-Pin Package D Requires M

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