C495 Datasheet | Specifications & PDF Download

: I 2SC496, SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES • Low Collector Saturation Voltage : v CE(sat)

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: I 2SC496, SILICON NPN EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES • Low Collector Saturation Voltage : v CE(sat)

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Power Transistors 2SC4953 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2

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DATA SHEET SILICON TRANSISTOR 2SC4955 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain

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MIC49500 5A Dual Supply, Low Voltage, High Bandwidth LDO General Description The MIC49500 is an ultra-high-bandwidth, lowdropout, 5.0A voltage regula

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MIC4950 Hyper Speed Control® 5A Buck Regulator Features • Input Voltage: 2.7V to 5.5V • 5A Output Current • Up to 95% Efficiency • Up to 3.3 MHz Oper

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MIC4950 Hyper Speed Control™ 5A Buck Regulator General Description The MIC4950 is a high-efficiency, 5A synchronous buck regulator with ultra-fast tr

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1 4 2 5 3 6 D SHENZHEN FUMAN ELECTRONICS CO., LTD. TC4953 (：S&CIC0750) 20V P MOS D VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-3A = 62mΩ@TYP RDS(

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor

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DATA SHEET SILICON TRANSISTOR 2SC4956 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, Hi

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MSC4953W -30V(D-S) Dual P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -30V,ID = -5.1A RDS(ON) < 105mΩ @ VGS=-4.5V RDS(ON) < 55mΩ

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DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain

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Power Transistors 2SC4953 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2

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DATA SHEET SILICON TRANSISTOR 2SC4958 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • • • Low Nois

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DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, Hi

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4953 DESCRIPTION ·Silicon NPN triple diffusion planar type ·High Speed Switching ·100% av

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DATA SHEET SILICON TRANSISTOR 2SC4959 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • • • Low Nois

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SHENZHEN FINE MADE ELECTRONICS GROUP CO., LTD. TC4953ES (：S&CIC1647) 11V P MOS VDS= -10V RDS(ON), Vgs@-4.5V, Ids@-3A = 85mΩ@TYP RDS(ON), Vgs@-2

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OPTi ® 82C495XLC 82C495XLC/82C206 PC/AT Chip Set Data Book Revision 1.0 912-3000-009 October, 1994 Copyright Copyright © 1994, OPTi Inc. All rights r

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40V P-Channel MOSFETs PDC4959X General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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