2SC535 Silicon NPN Epitaxial Planar Application V.
Toshiba
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Toshiba Semiconductor
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Inchange Semiconductor
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Renesas
C535 - 2SC535
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Toshiba Semiconductor
C5352 - 2SC5352
2SC5352 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5352 Switching Regulator and High-Voltage Switching Applications High-Speed DC-DC Conv.
Toshiba
C5358 - NPN Transistor
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications 2SC5358 Unit: mm • High breakdown voltage: VCEO = 230 V • C.
Renesas
2SC535 - Silicon NPN Transistor
2SC535 Silicon NPN Epitaxial Planar REJ03G0683-0200 (Previous ADE-208-1047) Rev.2.00 Aug.10.2005 Application VHF amplifier, mixer, local oscillator .
Toshiba
C5359 - 2SC5359
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UTC
2SC5353B - HIGH VOLTAGE NPN TRANSISTOR
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INCHANGE
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Texas Instruments
UCC5350-Q1 - Single-Channel Isolated Gate Driver
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Hitachi Semiconductor
2SC535 - NPN TRANSISTOR
2SC535 Silicon NPN Epitaxial Planar Application VHF amplifier, mixer, local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC.
UPM
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UPM 1SMC5348 SERIES SURFACE MOUNT SILICON ZENER DIODES Voltage Range 11-39 Volts Power 5.0mWatts Features * For surface mounted applications in orde.
ETC
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UTC
2SC5353 - HIGH VOLTAGE NPN TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2SC5353 NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR 1 TO-126 1 TO-126C DESCRIPTION Switching Regulator a.
Excelics Semiconductor
EIC5359-10 - Internally Matched Power FET
www.DataSheet4U.com EIC5359-10 UPDATED 08/16/2005 5.30 – 5.90 GHz 10W Internally Matched Power FET 2X 0.079 MIN 4X 0.102 FEATURES • 5.30-5.90 GHz B.
Weitron
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2SC5354 NPN Plastic-Encapsulate Transistor P b Lead(Pb)-Free FEATURES * Excellent hFE Linearity * Low Noise 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 MAX.
Silan
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