CEB603_Chino Datasheet | Specifications & PDF Download

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CEP6030L/CEB6030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 52A,RDS(ON) = 13.5mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Supe

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CEP6030LS2/CEB6030LS2 PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 52A , RDS(ON)=13.5m Ω @VGS=10V. RD

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CEP6036/CEB6036 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 135A, RDS(ON) = 4.6mΩ @VGS = 10V. Super high dense cel

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CEP6031L/CEB6031L March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor 4 FEATURES 30V , 60A , RDS(ON)=10m Ω @VGS=10V. RDS(ON)=1

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CEP6031LS2/CEB6031LS2 March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 60A , RDS(ON)=12m Ω @VGS=10V. RDS(ON

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CEP603ALS2/CEB603ALS2 March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 25A , RDS(ON)=22m Ω @VGS=10V. RDS(ON)=

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