CEB603 Datasheet, Transistor, Chino-Excel Technology

PDF File Details

Part number:

CEB603

Manufacturer:

Chino-Excel Technology

File Size:

516.69kb

Download:

📄 Datasheet

Description:

N-channel logic level enhancement mode field effect transistor.

TAGS

CEB603

Chino-Excel Technology

📁 Related Datasheet

CEB6020P - Single P-Channel Enhancement Mode MOSFET (Chino-Excel Technology)
.

CEB603 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.

CEB6030AL - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.

CEB6030L - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEP6030L/CEB6030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 52A,RDS(ON) = 13.5mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Supe.

CEB6030LS2 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEP6030LS2/CEB6030LS2 PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 52A , RDS(ON)=13.5m Ω @VGS=10V. RD.

CEB6031L - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEP6031L/CEB6031L March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor 4 FEATURES 30V , 60A , RDS(ON)=10m Ω @VGS=10V. RDS(ON)=1.

CEB6031LS2 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEP6031LS2/CEB6031LS2 March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 60A , RDS(ON)=12m Ω @VGS=10V. RDS(ON.

CEB6036 - N-Channel MOSFET (Chino-Excel Technology)
CEP6036/CEB6036 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 135A, RDS(ON) = 4.6mΩ @VGS = 10V. Super high dense cel.

CEB603AL - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.

CEB603ALS2 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEP603ALS2/CEB603ALS2 March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 25A , RDS(ON)=22m Ω @VGS=10V. RDS(ON)=.