CEB6086 Datasheet | Specifications & PDF Download

CEP6086/CEB6086 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 70A, RDS(ON) = 9.2mΩ @VGS = 10V. Super high dense cell design for ex

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isc N-Channel MOSFET Transistor CEB6086 FEATURES ·Drain Current : ID= 70A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Res

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CEP6086L/CEB6086L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 72A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @V

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