CED02N6 Datasheet | Specifications & PDF Download

CED02N6A/CEU02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.3A, RDS(ON) = 8 Ω @VGS = 10V. Super high dense cell design for e

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CED02N6/CEU02N6 Dec. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 1.9A , RDS(ON)=5 Ω @VGS=10V. Super high dens

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CED02N65G/CEU02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.8A, RDS(ON) = 5.5Ω @VGS = 10V. Super high dense cell design f

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CED02N65A/CEU02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dens

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CED02N65D/CEU02N65D N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 1.8A, RDS(ON) = 6.9 Ω @VGS = 10V. Super high dens

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N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 2A, RDS(ON) = 5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON).

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