CED02N6/CEU02N6 Dec. 2002 N-Channel Logic Level E.
Chino-Excel Technology
CED02N6G - N-Channel MOSFET
N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 2A, RDS(ON) = 5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON)..
CET
CED02N65A - N-Channel MOSFET
CED02N65A/CEU02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dens.
CET
CED02N6A - N-Channel MOSFET
CED02N6A/CEU02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.3A, RDS(ON) = 8 Ω @VGS = 10V. Super high dense cell design for e.
CET
CED02N6 - N-Channel MOSFET
CED02N6/CEU02N6 Dec. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 1.9A , RDS(ON)=5 Ω @VGS=10V. Super high dens.
CET
CED02N65G - N-Channel MOSFET
CED02N65G/CEU02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.8A, RDS(ON) = 5.5Ω @VGS = 10V. Super high dense cell design f.
CET
CED02N65D - N-Channel MOSFET
CED02N65D/CEU02N65D N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 1.8A, RDS(ON) = 6.9 Ω @VGS = 10V. Super high dens.
