CH20 Datasheet | Specifications & PDF Download

Preliminary Specifications Low Cost SMT 17 dB Bi-Directional Coupler 1700 - 2000 MHz CH20-0033-17G V2.00 Features q q q q q q q SO-8 PIN 8 .1497-.15

(24 views)

Innogration (Suzhou) Co., Ltd. Document Number: ITCH20210B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 210W, 28V High Power RF LDMOS FETs Descript

(21 views)

page 1 2 ECH200 sheet 1 FP date 1969.01 1999.08.12

(19 views)

www.DataSheet.co.kr SBD T y p e : FCH20 FCH20A 20A10 OUTLINE DRAWING FEATURES *TO-220AB Case *Fully Molded *Dual Diodes – Cathode Common *Low Forw

(18 views)

6FKRWWN\%DUULHU'LRGH *&+ $ 72  ‫્ٹ‬শ)HDWXUHV ଩,5 /RZOHDNDJHFXUUHQW ৈఢణ৿੿ +LJKIUHTXHQF\RSHUDWLRQ 5R+6੐ഥৌૢ 5R+6FRPSOLDQW ౴࿫8/ 9 

(15 views)

www.DataSheet.co.kr SBD T y p e : FCH20 FCH20A 20A06 OUTLINE DRAWING FEATURES *TO-220AB Case *Fully Molded *Dual Diodes – Cathode Common *Low Forw

(15 views)

6FKRWWN\%DUULHU'LRGH .&+ $  72  ‫્ٹ‬শ)HDWXUHV ଩,5 /RZOHDNDJHFXUUHQW ৈఢణ৿੿ +LJKIUHTXHQF\RSHUDWLRQ 5R+6੐ഥৌૢ 5R+6FRPSOLDQW ౴࿫8/ 9 

(15 views)

S B D T y p e : KCH20A10 FEATURES * Similar to TO-247AC(TO-3P)Case * Dual Diodes – Cathode Common * Low Forward Voltage Drop * Low Power Loss,High Eff

(15 views)

Innogration (Suzhou) Co., Ltd. Document Number: ITCH20160B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 160W, 28V High Power RF LDMOS FETs Descript

(14 views)

S B D T y p e : FCH20A03L FEATURES *TO-220AB Case *Fully Molded *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150

(14 views)

SMD Transient Voltage Suppressors Table of contents Table of Contents…………………………………………..……… 1-1 Introduction…………………………………………………..….. 2-2 Transient Vol

(14 views)

CH20-0058-S 11 dB Directional Coupler 1500 - 2000 MHz Features • • • Space Qualified Designed to meet the Stringent Reliability Standards of Space H

(13 views)

Innogration (Suzhou) Co., Ltd. Document Number: ITCH20180B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 180W, 28V High Power RF LDMOS FETs Descript

(13 views)

AMN2607 P-CH20V Fast Switching MOSFETs GENERAL DESCRIPTION The AMN2607 is the high cell density trenched P-ch MOSFETs, which provides excellent RDS

(13 views)

6FKRWWN\%DUULHU'LRGH )&+ $ 72 )XOO0ROG ‫્ٹ‬শ)HDWXUHV ଩,5 /RZOHDNDJHFXUUHQW ৈఢణ৿੿ +LJKIUHTXHQF\RSHUDWLRQ 5R+6੐ഥৌૢ 5R+6FRPSOLDQW ౴࿫

(12 views)

M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel. +85 2 2111 8088, Fax +85 2 2111 8087

(12 views)

Coming Attractions Low Cost SMT 17dB Bi-Directional Coupler 824 - 960 MHz Features q q q q q q q CH20-0032-17G V2.00 SO-8 PIN 8 .1497-.1574 (3.80-4

(12 views)

CH20-0059-S 11 dB Directional Coupler 500 - 1000 MHz Features • • • Space Qualified Designed to meet the Stringent Reliability Standards of Space Ha

(12 views)

Innogration (Suzhou) Co., Ltd. Document Number: ITCH20210B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 210W, 28V High Power RF LDMOS FETs Descript

(12 views)

Innogration (Suzhou) Co., Ltd. Document Number: ITCH20180B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 180W, 28V High Power RF LDMOS FETs Descript

(12 views)