M/A-COM Division of AMP Incorporated s North Ameri.
08CH201K - SMD Transient Voltage Suppressors
SMD Transient Voltage Suppressors Table of contents Table of Contents…………………………………………..……… 1-1 Introduction…………………………………………………..….. 2-2 Transient Vol.CH20-0032-17G - Low Cost SMT 17dB Bi-Directional Coupler 824 - 960 MHz
Coming Attractions Low Cost SMT 17dB Bi-Directional Coupler 824 - 960 MHz Features q q q q q q q CH20-0032-17G V2.00 SO-8 PIN 8 .1497-.1574 (3.80-4.CH20-0058-S - 11 dB Directional Coupler 1500 - 2000 MHz
CH20-0058-S 11 dB Directional Coupler 1500 - 2000 MHz Features • • • Space Qualified Designed to meet the Stringent Reliability Standards of Space H.CH20-0059-S - 11 dB Directional Coupler 500 - 1000 MHz
CH20-0059-S 11 dB Directional Coupler 500 - 1000 MHz Features • • • Space Qualified Designed to meet the Stringent Reliability Standards of Space Ha.ECH200 - Triode - Heptode
page 1 2 ECH200 sheet 1 FP date 1969.01 1999.08.12 .ITCH20180B2 - High Power RF LDMOS FET
Innogration (Suzhou) Co., Ltd. Document Number: ITCH20180B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 180W, 28V High Power RF LDMOS FETs Descript.ITCH20180B2E - High Power RF LDMOS FET
Innogration (Suzhou) Co., Ltd. Document Number: ITCH20180B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 180W, 28V High Power RF LDMOS FETs Descript.FCH20A20 - Schottky Barrier Diode
www.DataSheet.co.kr 20A 200V Cathode Common SBD Type : FCH20A20 OUTLINE DRAWING For High Frequency Rectification FEATURES * High VRM SBD * Low F.GCH20A10 - Schottky Barrier Diode
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6FKRWWN\%DUULHU'LRGH )&+ $ 72 )XOO0ROG ્ٹশ)HDWXUHV ,5 /RZOHDNDJHFXUUHQW ৈఢణ +LJKIUHTXHQF\RSHUDWLRQ 5R+6ഥৌૢ 5R+6FRPSOLDQW .CH20 - HIGH POWER DUAL DIRECTIONAL COUPLERS
M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel. +85 2 2111 8088, Fax +85 2 2111 8087.CH20-0033-17G - Low Cost SMT 17 dB Bi-Directional Coupler 1700 - 2000 MHz
Preliminary Specifications Low Cost SMT 17 dB Bi-Directional Coupler 1700 - 2000 MHz CH20-0033-17G V2.00 Features q q q q q q q SO-8 PIN 8 .1497-.15.ITCH20160B2 - High Power RF LDMOS FET
Innogration (Suzhou) Co., Ltd. Document Number: ITCH20160B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 160W, 28V High Power RF LDMOS FETs Descript.R500CH20 - HIGH POWER THYRISTOR
PST Technical Data : CD-050 Page 1 of 3 Power Thyristor R500CH** 2000-2800 VDRM; 2475Aavg ********************************************************.R200CH20FJO - HIGH POWER THYRISTOR
Technical Data : Page1 of 3 R200CH20FJO - Power Thyristor 2000 VDRM; ******************************************************************** HIGH PO.ITCH20210B2 - High Power RF LDMOS FET
Innogration (Suzhou) Co., Ltd. Document Number: ITCH20210B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 210W, 28V High Power RF LDMOS FETs Descript.ITCH20210B2E - High Power RF LDMOS FET
Innogration (Suzhou) Co., Ltd. Document Number: ITCH20210B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 210W, 28V High Power RF LDMOS FETs Descript.PI3CH200 - 2-Bit Bus Switch
PI3CH200 ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||| ||||||||||||||.