ITCH20210B2E Datasheet, Fet, Innogration

ITCH20210B2E Features

  • Fet
  • High Efficiency and Linear Gain Operations
  • Integrated ESD Protection
  • Internally Matched for Ease of Use
  • Excellent thermal stability, low HCI drif

PDF File Details

Part number:

ITCH20210B2E

Manufacturer:

Innogration

File Size:

942.05kb

Download:

📄 Datasheet

Description:

High power rf ldmos fet. The ITCH20210B2 is a 210-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applica

Datasheet Preview: ITCH20210B2E 📥 Download PDF (942.05kb)
Page 2 of ITCH20210B2E Page 3 of ITCH20210B2E

ITCH20210B2E Application

  • Applications with frequencies from 1800 to 2000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation forma

TAGS

ITCH20210B2E
High
Power
LDMOS
FET
Innogration

📁 Related Datasheet

ITCH20210B2 - High Power RF LDMOS FET (Innogration)
Innogration (Suzhou) Co., Ltd. Document Number: ITCH20210B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 210W, 28V High Power RF LDMOS FETs Descript.

ITCH20120B2 - High Power RF LDMOS FET (Innogration)
Innogration (Suzhou) Co., Ltd. Document Number: ITCH20120B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 120W, 28V High Power RF LDMOS FETs Descript.

ITCH20120B2E - High Power RF LDMOS FET (Innogration)
Innogration (Suzhou) Co., Ltd. Document Number: ITCH20120B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 120W, 28V High Power RF LDMOS FETs Descript.

ITCH20160B2 - High Power RF LDMOS FET (Innogration)
Innogration (Suzhou) Co., Ltd. Document Number: ITCH20160B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 160W, 28V High Power RF LDMOS FETs Descript.

ITCH20160B2E - High Power RF LDMOS FET (Innogration)
Innogration (Suzhou) Co., Ltd. Document Number: ITCH20160B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 160W, 28V High Power RF LDMOS FETs Descript.

ITCH20180B2 - High Power RF LDMOS FET (Innogration)
Innogration (Suzhou) Co., Ltd. Document Number: ITCH20180B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 180W, 28V High Power RF LDMOS FETs Descript.

ITCH20180B2E - High Power RF LDMOS FET (Innogration)
Innogration (Suzhou) Co., Ltd. Document Number: ITCH20180B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 180W, 28V High Power RF LDMOS FETs Descript.

ITCH22120B2 - High Power RF LDMOS FET (Innogration)
Innogration (Suzhou) Co., Ltd. Document Number: ITCH22120B2 Preliminary Datasheet V1.0 2110MHz-2170MHz, 120W, 28V High Power RF LDMOS FETs Descript.

ITCH22120B2E - High Power RF LDMOS FET (Innogration)
Innogration (Suzhou) Co., Ltd. Document Number: ITCH22120B2 Preliminary Datasheet V1.0 2110MHz-2170MHz, 120W, 28V High Power RF LDMOS FETs Descript.

ITCH22160B4 - High Power RF LDMOS FET (Innogration)
Innogration (Suzhou) Co., Ltd. Document Number: ITCH22160B4 Preliminary Datasheet V1.0 2000MHz-2200MHz, 160W, 28V High Power RF LDMOS FETs Descript.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts