ITCH20210B2E
Innogration
942.05kb
High power rf ldmos fet. The ITCH20210B2 is a 210-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applica
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📁 Related Datasheet
ITCH20210B2 - High Power RF LDMOS FET
(Innogration)
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH20210B2 Preliminary Datasheet V1.0
1800MHz-2000MHz, 210W, 28V High Power RF LDMOS FETs
Descript.
ITCH20120B2 - High Power RF LDMOS FET
(Innogration)
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH20120B2 Preliminary Datasheet V1.0
1800MHz-2000MHz, 120W, 28V High Power RF LDMOS FETs
Descript.
ITCH20120B2E - High Power RF LDMOS FET
(Innogration)
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH20120B2 Preliminary Datasheet V1.0
1800MHz-2000MHz, 120W, 28V High Power RF LDMOS FETs
Descript.
ITCH20160B2 - High Power RF LDMOS FET
(Innogration)
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH20160B2 Preliminary Datasheet V1.0
1800MHz-2000MHz, 160W, 28V High Power RF LDMOS FETs
Descript.
ITCH20160B2E - High Power RF LDMOS FET
(Innogration)
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH20160B2 Preliminary Datasheet V1.0
1800MHz-2000MHz, 160W, 28V High Power RF LDMOS FETs
Descript.
ITCH20180B2 - High Power RF LDMOS FET
(Innogration)
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH20180B2 Preliminary Datasheet V1.0
1800MHz-2000MHz, 180W, 28V High Power RF LDMOS FETs
Descript.
ITCH20180B2E - High Power RF LDMOS FET
(Innogration)
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH20180B2 Preliminary Datasheet V1.0
1800MHz-2000MHz, 180W, 28V High Power RF LDMOS FETs
Descript.
ITCH22120B2 - High Power RF LDMOS FET
(Innogration)
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH22120B2 Preliminary Datasheet V1.0
2110MHz-2170MHz, 120W, 28V High Power RF LDMOS FETs
Descript.
ITCH22120B2E - High Power RF LDMOS FET
(Innogration)
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH22120B2 Preliminary Datasheet V1.0
2110MHz-2170MHz, 120W, 28V High Power RF LDMOS FETs
Descript.
ITCH22160B4 - High Power RF LDMOS FET
(Innogration)
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH22160B4 Preliminary Datasheet V1.0
2000MHz-2200MHz, 160W, 28V High Power RF LDMOS FETs
Descript.