ITCH20120B2 Datasheet, Fet, Innogration

✔ ITCH20120B2 Features

High Efficiency and Linear Gain Operations
Integrated ESD Protection
Internally Matched for Ease of Use
Excellent thermal stability, low HCI drift
Large Positi

✔ ITCH20120B2 Application

with frequencies from 1800 to 2000 MHz. It Can be used in Class AB/B and Class C for all typical cellular ba

PDF File Details

Innogration manufacturer logo

Part number:

ITCH20120B2

Manufacturer:

Innogration

File Size:

881.01 KB

Download:

📄 Datasheet

Description:

High power rf ldmos fet. The ITCH20120B2 is a 120-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applica

📥 Download PDF (881.01 KB)

📁 Related Datasheet

ITCH20120B2E - High Power RF LDMOS FET (Innogration)

ITCH20160B2 - High Power RF LDMOS FET (Innogration)

ITCH20160B2E - High Power RF LDMOS FET (Innogration)

ITCH20180B2 - High Power RF LDMOS FET (Innogration)

ITCH20180B2E - High Power RF LDMOS FET (Innogration)

ITCH20210B2 - High Power RF LDMOS FET (Innogration)

ITCH20210B2E - High Power RF LDMOS FET (Innogration)

ITCH22120B2 - High Power RF LDMOS FET (Innogration)

TAGS

ITCH20120B2 High Power LDMOS FET Innogration