ITCH20120B2 Datasheet - Innogration

High Power RF LDMOS FET

ITCH20120B2 Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Excellent thermal stability, low HCI drift

* Large Positiv

ITCH20120B2 General Description

The ITCH20120B2 is a 120-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH20120B2 *Typ.

ITCH20120B2 Datasheet (881.01 KB)

ITCH20120B2 Datasheet Preview — Preview of ITCH20120B2 PDF

Datasheet Details

Part number:

ITCH20120B2

Manufacturer:

Innogration

File Size:

881.01 KB

Description:

High power rf ldmos fet.
Innogration (Suzhou) Co., Ltd. Document Number: ITCH20120B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 120W, 28V High Power RF LDMOS FETs Descript.

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ITCH20120B2 High Power LDMOS FET Innogration

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ITCH20120B2 Features

ITCH20120B2 General Description

Datasheet Details

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Description:

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