ITCH20160B2E, ITCH20160B2 Datasheet - Innogration

ITCH20160B2E High Power RF LDMOS FET

The ITCH20160B2 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH20160B2 *Typ.

ITCH20160B2E Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Excellent thermal stability, low HCI drift

* Large Positiv

ITCH20160B2-Innogration.pdf

ITCH20160B2E Datasheet Preview — This datasheet PDF includes multiple part numbers: ITCH20160B2E, ITCH20160B2. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ITCH20160B2E, ITCH20160B2

Manufacturer:

Innogration

File Size:

882.30 KB

Description:

High power rf ldmos fet.

Note:

This datasheet PDF includes multiple part numbers: ITCH20160B2E, ITCH20160B2.
Please refer to the document for exact specifications by model.

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ITCH20160B2E ITCH20160B2 High Power LDMOS FET Innogration

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