ITCH20180B2E, ITCH20180B2 Datasheet - Innogration

ITCH20180B2E High Power RF LDMOS FET

The ITCH20180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH20180B2 *Typ.

ITCH20180B2E Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Excellent thermal stability, low HCI drift

* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation

* Pb-free, RoHS-compliant Table

ITCH20180B2-Innogration.pdf

ITCH20180B2E Datasheet Preview — This datasheet PDF includes multiple part numbers: ITCH20180B2E, ITCH20180B2. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ITCH20180B2E, ITCH20180B2

Manufacturer:

Innogration

File Size:

946.61 KB

Description:

High power rf ldmos fet.

Note:

This datasheet PDF includes multiple part numbers: ITCH20180B2E, ITCH20180B2.
Please refer to the document for exact specifications by model.

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ITCH20180B2E ITCH20180B2 High Power LDMOS FET Innogration

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