* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift
* Large Positiv
ITCH20120B2E Datasheet (881.01 KB)
ITCH20120B2E
Innogration
881.01 KB
High power rf ldmos fet.
Innogration (Suzhou) Co., Ltd.
Document Number: ITCH20120B2 Preliminary Datasheet V1.0
1800MHz-2000MHz, 120W, 28V High Power RF LDMOS FETs
Descript.
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