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ITCH20120B2E, ITCH20120B2 - High Power RF LDMOS FET

ITCH20120B2E Description

Innogration (Suzhou) Co., Ltd.Document Number: ITCH20120B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 120W, 28V High Power RF LDMOS FETs Descript.
The ITCH20120B2 is a 120-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with freque.

ITCH20120B2E Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift
* Large Positiv

ITCH20120B2E Applications

* with frequencies from 1800 to 2000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH20120B2
* Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=10 us, Duty cycle=12%

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ITCH20120B2E, ITCH20120B2. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ITCH20120B2E, ITCH20120B2
Manufacturer
Innogration
File Size
881.01 KB
Datasheet
ITCH20120B2-Innogration.pdf
Description
High Power RF LDMOS FET
Note
This datasheet PDF includes multiple part numbers: ITCH20120B2E, ITCH20120B2.
Please refer to the document for exact specifications by model.

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High Power LDMOS FET Innogration
Innogration ITCH20120B2E-like datasheet

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