Description
Innogration (Suzhou) Co., Ltd.Document Number: ITCH20120B2 Preliminary Datasheet V1.0 1800MHz-2000MHz, 120W, 28V High Power RF LDMOS FETs Descript.
The ITCH20120B2 is a 120-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with freque.
Features
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift
* Large Positiv
Applications
* with frequencies from 1800 to 2000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH20120B2
* Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=10 us, Duty cycle=12%
