ITCH20120B2E Datasheet, Fet, Innogration

ITCH20120B2E Features

• Fet
• High Efficiency and Linear Gain Operations
• Integrated ESD Protection
• Internally Matched for Ease of Use
• Excellent thermal stability, low HCI drif

PDF File Details

Part number:

ITCH20120B2E

Manufacturer:

Innogration

File Size:

881.01kb

Download:

📄 Datasheet

Description:

High power rf ldmos fet. The ITCH20120B2 is a 120-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applica

ITCH20120B2E Application

• Applications with frequencies from 1800 to 2000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation forma

TAGS

ITCH20120B2E

Innogration

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