ITCH20120B2E, ITCH20120B2 Datasheet - Innogration

ITCH20120B2E High Power RF LDMOS FET

The ITCH20120B2 is a 120-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH20120B2 *Typ.

ITCH20120B2E Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Excellent thermal stability, low HCI drift

* Large Positiv

ITCH20120B2-Innogration.pdf

ITCH20120B2E Datasheet Preview — This datasheet PDF includes multiple part numbers: ITCH20120B2E, ITCH20120B2. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ITCH20120B2E, ITCH20120B2

Manufacturer:

Innogration

File Size:

881.01 KB

Description:

High power rf ldmos fet.

Note:

This datasheet PDF includes multiple part numbers: ITCH20120B2E, ITCH20120B2.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

ITCH20120B2 High Power RF LDMOS FET (Innogration)

ITCH20160B2 High Power RF LDMOS FET (Innogration)

ITCH20160B2E High Power RF LDMOS FET (Innogration)

ITCH20180B2 High Power RF LDMOS FET (Innogration)

ITCH20180B2E High Power RF LDMOS FET (Innogration)

ITCH20210B2 High Power RF LDMOS FET (Innogration)

ITCH20210B2E High Power RF LDMOS FET (Innogration)

ITCH22120B2 High Power RF LDMOS FET (Innogration)

TAGS

ITCH20120B2E ITCH20120B2 High Power LDMOS FET Innogration

ITCH20120B2E Distributor