ITCH20120B2E - High Power RF LDMOS FET
The ITCH20120B2 is a 120-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH20120B2 *Typ
ITCH20120B2E Features
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift
* Large Positiv
