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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1216 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V(Min) ·Good Li

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www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD5703 DESCRIPTION ·High Breakdown Voltage

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TS1117B 800mA Low Dropout Positive Voltage Regulator www.DataSheet4U.com TO-252 SOT-223 TO-220 Pin Definition: 1. Fixed / Adj 2. Output (tab) 3. I

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TS7800 series 3-Terminal Fixed Positive Voltage Regulator ITO-220 Pin assignment: 1. Input 2. Ground 3. Output (Heatsink surface connected to Pin 2)

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC = 0.8A. ƽEpitaxial planar t

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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor LMUN51xxT1G SERIES with Monolithic Bias Resistor Network T

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KBP201G thru KBP207G Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Ideal for printed circuit board - Reliable low c

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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1265N DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC3182

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TS7800 series 3-Terminal Fixed Positive Voltage Regulator ITO-220 Pin assignment: 1. Input 2. Ground 3. Output (Heatsink surface connected to Pin 2)

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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. The

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LESHAN RADIO COMPANY, LTD. UF4001 thru UF4007 1.Feature & Dimensions * Plastic package has Underwriters Laboratories Ultrafast Rectifiers Flammab

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www.DataSheet4U.com Crystal oscillator SIP LOW/MEDIUM-FREQUENCY CRYSTAL OSCILLATOR SG-10 Products number Q31 1 0 0 0 0 x x x x x 0 0 • • • • Low cu

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LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150

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LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current High breakdown voltage Guard ring protected Low diode capacitance. S-

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC =1.5 A. ƽEpitaxial planar ty

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