CS50N06 Datasheet | Specifications & PDF Download

N-Channel Trench Power MOSFET General Description The CS50N06 combines advanced trench MOSFET technology with a low resistance package to provide extr

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N R N-CHANNEL MOSFET JCS50N06H MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ 50 A 60 V 23 mΩ 34 nC   UPS APPLICATI

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CS50N06 N MOSFT Description CS50N06 N MOSFET。 ，， 。、 PWM 、 。 Features ·VDSS =60V ·ID =50A ·RDS(ON)＜10mΩ (VGS=10V) CS50N06 TO-220 1.Gate 2.Drain 3.

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Silicon N-Channel Power MOSFET ○R CS50N065 A4 General Description： CS50N065 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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Silicon N-Channel Power MOSFET ○R CS50N065 A8 General Description： CS50N065 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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N R N-CHANNEL MOSFET JCS50N06H MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ 50 A 60 V 23 mΩ 34 nC   UPS APPLICATI

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N R N-CHANNEL MOSFET JCS50N06H MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ 50 A 60 V 23 mΩ 34 nC   UPS APPLICATI

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N R N-CHANNEL MOSFET JCS50N06H MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ 50 A 60 V 23 mΩ 34 nC   UPS APPLICATI

(13 views)

N R N-CHANNEL MOSFET JCS50N06H MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ 50 A 60 V 23 mΩ 34 nC   UPS APPLICATI

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BR50N06(CS50N06) N-CHANNEL MOSFET/N MOS :：、DC/DC 、。 Purpose: Suited for low voltage applications such as automotive, DC/DC Converters, and high ef

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Silicon N-Channel Power MOSFET ○R CS50N065 A3 General Description： CS50N065 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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