.
TPS
SY3408 - Bluetooth headset charging case solution
SY3408 SY3408 IC，、LED 、D+、D，。 ， 。 SY3408SOP8。 TWS / ◆ ，，、 MOS ◆ 0.2A ◆ //， ◆ C/10 ， ◆ ，VINDPM：4.6V ◆ 4.2V，±1% ◆ ◆ ， ◆ 0.5A ◆ ：3.5uA ◆ 、、、 ◆ .
TPS
SY7658 - Bluetooth headset charging case solution
SY7658 SY7658 IC，、LED 、， 。 ，。 SY7658ESOP8。 TWS / ◆ ，，、 MOS ◆ 0.2A/0.5A， ◆ //， ◆ C/10 ， ◆ ，VINDPM：4.6V ◆ 4.2V，±1% ◆ ◆ ， (SY7658-E4K2R/ SY765.
JILIN SINO
D1555 - CASE-RATED BIPOLAR TRANSISTOR
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 5A 5 V(max) 1 s(max.
JILIN SINO-MICROELECTRONICS
3DD5017 - CASE-RATED BIPOLAR TRANSISTOR
R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017 FOR LOW FREQUENCY 3DD5017 Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»ú¿.
JILIN SINO-MICROELECTRONICS
3DD5011 - CASE-RATED BIPOLAR TRANSISTOR
CASE-RATED BIPOLAR TRANSISTOR 3DD5011 FOR LOW FREQUENCY AMPLIFICATION R 3DD5011 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 900V 10 A 0.5 V(max) 0..
Motorola Inc
BAS21LT1 - CASE 318 08/ STYLE 8 SOT 23 (TO 236AB)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAS21LT1/D High Voltage Switching Diode 3 CATHODE 1 ANODE BAS21LT1 Motorola Preferred.
ETC
SY3408 - Bluetooth cradle charging case solution
SY3408 Bluetooth cradle charging case solution ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ SY3408 Bluetooth cradle charging case solution .
JILIN SINO
3DD5038P - CASE-RATED BIPOLAR TRANSISTOR
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5038P FOR LOW FREQUENCY R 3DD5038P MAIN CHARACTERISTICS Package TO-3P(H)IS BVCBO IC VCE(sat) Tf 1200 .
TPS
SY7608 - Bluetooth headset charging case solution
SY7608 SY7608 IC，、LED 、， 。 ，。 SY7608SOT23-6。 TWS / ◆ ，，、 MOS ◆ 0.2A ◆ 0.5A ◆ //， ◆ C/10 ， ◆ ，VINDPM：4.6V ◆ 4.2V，±1% ◆ ◆ ， ◆ ：5uA ◆ 、、、 ◆ 2LE.
Vishay Telefunken
TSTS7102 - GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case
TSTS710. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description TSTS710. series are infrared emitting diodes in stand.
Murata Electronics
PKM22EPP - Encased External Drive
PIEZO ALARMS ENCASED EXTERNAL DRIVE (no internal circuitry) PKM Series The piezo alarms described on this page have no “feedback” tab and are particul.
JILIN SINO-MICROELECTRONICS
3DD5023 - CASE-RATED BIPOLAR TRANSISTOR
R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCY 3DD5023 Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»úÐ.
JILIN SINO-MICROELECTRONICS
3DD5287 - CASE-RATED BIPOLAR TRANSISTOR
R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5287 FOR LOW FREQUENCY 3DD5287 Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ; z ²ÊÉ«µçÊÓ»ú¿.
MOSCASE
MC908 - Indoor and outdoor temperature gauge
Tel:83436076 Fax:83849836 . LCD ： V2.0 MC908 MC908 ．： 2 1/3Bias,1/4Duty,3.0V ▲▲ °C／°F MAX／MIN ．： 。 、。 ：0°C~50 °C (32°F~122°F)。 ：-40°C ~70°C .
Injoinic
IP5518 - A charging case management SoC
IP5518 MCU TWS SoC 1 300mA 93% ， 500mA ， ， 4.20V、4.30V、4.35V 4.4V 12bit ADC， 4/3/2/1 LED UART， //，.
ETC
DO204AL - CASE STYLE AND DIMENSIONS
CASE STYLE AND DIMENSIONS Conform to JEDEC Outline DO-204AL (DO-41) Dimensions in millimeters and inches .
GHZ Technology
2003 - Case Outline 55BT-1 / Style 1
2003 3 Watt - 28 Volts, Class C Microwave 2000 MHz GENERAL DESCRIPTION The 2003 is a COMMON BASE transistor capable of providing 3 Watts Class C, RF o.
