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9014 NPN SILICON TRANSISTOR TO 92 FEATURES Power dissipation PCM : 0.4 W Tamb=25 Collector current A ICM : 0.1 Collector-base voltage V V(BR)CBO :

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PC123/PC123F PC123/PC123F s Features 1. Conform to European Safety Standard 2. Internal isolation distance : 0.4mm or more 3. High collector-emitter

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9013 NPN SILICON TRANSISTOR TO 92 FEATURES 1.EMITTER Power dissipation PCM : 0.625 Collector current ICM : 0.5 Collector-base voltage V(BR)

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DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS PN2222 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for gener

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PC810 PC810 s Features 1. High speed response under high resistance load ( t off : MAX. 1ms at I F = 1mA, VCC = 5V, R L = 110k Ω ) 2. High current tr

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DC COMPONENTS CO., LTD. R 1A1 THRU 1A7 RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT

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Electrical Characteristics Standard Resistance Range: 10Ω ~ 2,0MΩ Resistance Tolerance: +/-10% Standard Absolute Minimum Resistance: ≤1% or 2Ω Contact

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Detector Components Part No: 1.00 dia G – 100 G-100 Chip 0.20 0.50 0.71 dia BC GND Anode Case Ground Pin Cathode ELECTRO OPTICAL SYSTEMS offe

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www.DataSheet4U.com DC COMPONENTS CO., LTD. R I772 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Descriptio

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www.DataSheet4U.com DC COMPONENTS CO., LTD. R I882 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Descriptio

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Singlechip LH7xxxx ‘790 ‘789 ‘791 SMxxxx ‘K series MCU Microcontroller MPU Microprocessor ARM Advanced RISC Machines Databank LCD Controller LCD Drive

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Technical Specification Electrical Characteristics Standard Resistance Range: 100Ω ~ 1,0MΩ Resistance Tolerance: +/-25% Standard Absolute Minimum Resi

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DC COMPONENTS CO., LTD. R W66;N TJRU W76N RGETKHKGR SQGEKCMKSTS TGEJOKECM SQGEKHKECTKPOS PH SKOIMG3QJCSG SKMKEPO DRKFIG RGETKHKGR VPMTCIG RCOIG 3 ;

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SPECDILAS V-Series SPECDILAS V-850-GMP-MTE General Specifications - no mode hopping - singlemode (20 dB suppression) - circular beam profile - low be

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PC851 PC851 s Features 1. High collector-emitter voltage ( VCEO : 300V) 2. High isolation voltage between input and output ( Viso : 5 000V rms ) 3. C

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