SEMICONDUCTOR TECHNICAL DATA KTD1414 EPITAXIAL PL.
SavantIC
D1414 - 2SD1414
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package www.datasheet4u.com ·High DC current g.
SavantIC
2SD1414 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package www.datasheet4u.com ·High DC current g.
KEC
KTD1414 - EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR TECHNICAL DATA KTD1414 EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURE.
Inchange Semiconductor
KTD1414 - Silicon NPN Power Transistors
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Volt.
ST Microelectronics
SD1414 - RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS
SD1414 RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS . . . . 836 MHz 12.5 VOLTS COMMON BASE P OUT = 45 W MIN. WITH 4.7 dB GAIN .230 6LFL (M14.
ST Microelectronics
SD1414-12 - RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS
® SD1414-12 RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS PRELIMINARY DATA s s s s 960 MHz 13.5 VOLTS COMMON BASE POUT = 40 W MIN. WITH 4.3 d.
KEC
D1414 - KTD1414
SEMICONDUCTOR TECHNICAL DATA KTD1414 EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURE.
Toshiba Semiconductor
TMD1414-2C - MICROWAVE POWER MMIC AMPLIFIER
www.DataSheet4U.com MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD1414-2C FEATURES n HIGH POWER P1dB=34.5dBm at 13.75GHz.
Excelics Semiconductor
EID1414A1-12 - 14.00-14.50 GHz 12-Watt Internally Matched Power FET
www.DataSheet4U.com EID1414A1-12 UPDATED 07/12/2007 14.00-14.50 GHz 12-Watt Internally Matched Power FET Excelics EID1414A1-12 .827±.010 .669 .120 M.
Excelics Semiconductor
EID1414A1-5 - 14.00-14.50 GHz 5-Watt Internally-Matched Power FET
www.DataSheet4U.com EID1414A1-5 UPDATED 07/12/2007 14.00-14.50 GHz 5-Watt Internally-Matched Power FET FEATURES • • • • • • • 14.00-14.50 GHz Bandw.
Excelics Semiconductor
EID1414A1-8 - 14.00-14.50 GHz 8-Watt Internally-Matched Power FET
www.DataSheet4U.com EID1414A1-8 UPDATED 07/12/2007 14.00-14.50 GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • 14.00-14.50 GHz Bandw.
INCHANGE
2SD1414 - NPN Transistor
isc Silicon NPN Darlington Power Transistor 2SD1414 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Satura.