D1414 Datasheet | Specifications & PDF Download

Public IGI65D1414A3MS Final datasheet CoolGaNTM Transistor Dual 650V G5 140 m / 650 V GaN half-bridge Features • Two 140 m GaN switches in half-bri

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www.DataSheet4U.com EID1414A1-5 UPDATED 07/12/2007 14.00-14.50 GHz 5-Watt Internally-Matched Power FET FEATURES • • • • • • • 14.00-14.50 GHz Bandw

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package www.datasheet4u.com ·High DC current g

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www.DataSheet4U.com EID1414A1-12 UPDATED 07/12/2007 14.00-14.50 GHz 12-Watt Internally Matched Power FET Excelics EID1414A1-12 .827±.010 .669 .120 M

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Volt

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SEMICONDUCTOR TECHNICAL DATA KTD1414 EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURE

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SEMICONDUCTOR TECHNICAL DATA KTD1414 EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURE

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www.DataSheet4U.com EID1414A1-8 UPDATED 07/12/2007 14.00-14.50 GHz 8-Watt Internally-Matched Power FET FEATURES • • • • • • • 14.00-14.50 GHz Bandw

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package www.datasheet4u.com ·High DC current g

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isc Silicon NPN Darlington Power Transistor 2SD1414 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Satura

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SD1414 RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS . . . . 836 MHz 12.5 VOLTS COMMON BASE P OUT = 45 W MIN. WITH 4.7 dB GAIN .230 6LFL (M14

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® SD1414-12 RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS PRELIMINARY DATA s s s s 960 MHz 13.5 VOLTS COMMON BASE POUT = 40 W MIN. WITH 4.3 d

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www.DataSheet4U.com MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA TMD1414-2C FEATURES n HIGH POWER P1dB=34.5dBm at 13.75GHz

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