D1816 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1816 DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compact

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www.DataSheet4U.com DataSheet4U.com DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com 1100 CRAIOVA 0251.413.620-415.995 Data

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www.DataSheet4U.com DataSheet4U.com DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com 1100 CRAIOVA 0251.413.620-415.995 Data

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1816J3 BVCEO IC Spec. No. : C821J3 Issued Date : 2005.03.29 Revised Date :2

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MXD1810–MXD1813/ MXD1815–MXD1818 Low-Power μP Reset Circuits in 3-Pin SC70/SOT23 General Description The MXD1810–MXD1813/MXD1815–MXD1818 family of m

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a FEATURES Compatible with Microsoft® PC 97 Logo Requirements Supports Applications Written for Windows® 95, Windows 3.1, Windows NT, SoundBlaster® Pr

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Ordering number:EN2540A PNP/NPN Epitaxial Planar Silicon Transistors www.DataSheet4U.com 2SB1216/2SD1816 High-Current Switching Applications Applic

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2SB1216, 2SD1816 Bipolar Transistor (−)100V, (−)4A, Low VCE(sat), (PNP)NPN Single www.onsemi.com Features • Low Collector to Emitter Saturation Volt

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Elektronische Bauelemente 2SD1816 4A , 120V NPN Epitaxial Planar Silicon Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead

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Power Module Package S Rectifier Diode Module Rectifier Module Circuit Series- Package S RoHS ® Features • Low reverse recovery loss • Low forward

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UNISONIC TECHNOLOGIES CO., LTD 2SD1816 NPN PLANAR TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS  FEATURES * Low collector-to-emitter saturation

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SMD Type Transistors NPN Transistors 2SD1816 ■ Features ● Low Collector-to-Emitter Saturation Voltage ● Fast Switching Speed ● High fT. ● Complemen

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1816 DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compact

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1816I3 BVCEO IC Spec. No. : C821I3 Issued Date : 2005.10.05 Revised Date :2

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Collector Power Dissipation : PC= 2 W(Max)

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Ordering number:EN2540A PNP/NPN Epitaxial Planar Silicon Transistors www.DataSheet4U.com 2SB1216/2SD1816 High-Current Switching Applications Applic

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